SI2304DDS-T1-GE3 MOSFET Power Electronics High-Performance and
Cost-Effective Solution
Product Description:
The Vishay Siliconix SI2304DDS-T1-GE3 is a N-Channel MOSFET that
provides superior power handling in a variety of applications. This
MOSFET is designed to offer excellent switching performance, low
leakage current, low gate charge, and low on-resistance. The
SI2304DDS-T1-GE3 is suitable for use in high power switching, power
management, and other power applications.
Features:
• 4.8V gate drive
• Low on-resistance
• Low gate charge
• Low leakage current
• RoHS compliant
• Lead-free
Specifications:
• Drain-Source Voltage (VDS): 30V
• Drain-Source On-State Resistance (RDS(on)): 0.0095 Ohm
• Continuous Drain Current (ID): 12A
• Pulsed Drain Current (IDM): 25A
• Gate-Source Voltage (VGS): -5V to +4.8V
• Power Dissipation (Pd): 3W
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