NTR5103NT1G MOSFET Power Electronics TO-236-3 Device for High Power
Applications
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
ON Semiconductor NTR5103NT1G TO-236-3 Metal-Oxide-Semiconductor
Field-Effect Transistor (MOSFET) Power Electronics provides
high-performance, low-power solutions for a wide variety of
applications. This NTR5103NT1G MOSFET device features high power
efficiency, low on-resistance, and low gate charge for improved
system performance. Its low on-resistance and gate charge makes it
suitable for high-frequency switching applications. The NTR5103NT1G
MOSFET offers high current-handling capability and fast switching
speed to provide better overall system performance. The MOSFET is
housed in a TO-236-3 package and comes with a thermal pad for
enhanced thermal performance.With its low on-resistance and gate
charge, the NTR5103NT1G MOSFET offers excellent system performance
and efficiency. It is suitable for use in a wide range of power
electronics applications such as power converters, DC/DC
converters, motor drives, and switching power supplies.
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