2N7002ET1G MOSFET Power Electronics TO-236-3 Transistor High Performance Applications
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
The 2N7002ET1G N-Channel MOSFET power electronics is a small-signal
transistor designed for low-voltage switching applications. It is
housed in a TO-236-3 package, making it ideal for use in small,
tight spaces.The 2N7002ET1G is capable of operating at a maximum
voltage of 30 V and a maximum drain current of 200 mA. It has a low
on-resistance of 0.7 Ω and a low gate threshold voltage of 3.2 V.
This MOSFET provides excellent performance and reliability.
The 2N7002ET1G has a high switching speed of 2.5 ns and a low
thermal resistance of 0.25 °C/W. It is also built with a high input
impedance which helps reduce power consumption. This MOSFET is
suitable for use in a variety of low-voltage switching applications
such as digital logic, power supplies, and motor control.The
2N7002ET1G is RoHS compliant and has an operating temperature range
of -55 °C to +125 °C. It is also available in tape and reel
packaging for easy handling and storage. This MOSFET is a reliable
and cost-effective solution for a variety of low-voltage switching
applications.
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