NTR4003NT3G MOSFET Power Electronics TO-236-3 Device High Power Applications
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package
| | |
Package / Case | |
1. The NTR4003NT3G is a P-channel logic level enhancement mode
Field Effect Transistor (FET) from ON Semiconductor. This device is
housed in a TO-236-3 surface-mount package, making it suitable for
use in a wide range of applications. This FET is designed to
operate efficiently in both high and low current applications, with
a drain-source voltage of up to 20V.
2. The NTR4003NT3G is ideal for use in power management
applications, such as DC-DC conversion, power switching, and other
power electronics applications. This FET features an ultra-low gate
charge, allowing for fast switching speeds and high power
efficiency. Additionally, the device offers high immunity to noise,
with ESD protection up to 2kV.
3. The NTR4003NT3G is RoHS compliant and offers easy integration
into existing designs. This device is available in a wide range of
package and pin configurations, allowing for easy customization to
meet different design requirements. With its low on-resistance and
high current capacity, this FET is an excellent choice for a
variety of power management and power electronics applications.
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