BSS138L MOSFET Power Electronics N-Channel Enhancement Mode TO-236-3
Package
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
1. The BSS138L is a P-channel enhancement-mode MOSFET designed to
provide reliable performance and high power density in a compact
TO-236-3 package. It is ideally suited for applications such as
load switches, small signal switching, and power management in
portable electronics.
2. The BSS138L features a low on-state resistance, fast switching
speed, and low gate charge for improved efficiency and reduced
power loss. It also has a high breakdown voltage and low threshold
voltage for improved robustness and reliability.
3. This MOSFET is designed to operate over a wide temperature range
and offers excellent protection against thermal breakdown. It is
also highly resistant to ESD, allowing it to perform reliably in
the most demanding applications. The BSS138L is an ideal choice for
a wide range of power electronics applications.
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