FDD86367 MOSFET Power Electronics
TO-252-3 Transistor High Performance Efficiency Reliable Solution
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The FDD86367 is a N-channel Power MOSFET which is housed in an
industry standard TO-252-3 package. It is designed to be used in
high frequency switching applications, such as motor control,
converters and switching power supplies.
The FDD86367 features excellent performance characteristics,
including low on-resistance, fast switching speed, and low gate
charge. It has a maximum drain-source voltage of 600V and a maximum
drain current of 11A. It is capable of handling high surge current
and can withstand up to an avalanche energy of 500mJ. The FDD86367
also features a high power dissipation of 600W, making it suitable
for applications where high power density is required.
Overall, the FDD86367 is an excellent choice for applications
requiring high frequency switching and high power density. It is
easy to mount and is available in a variety of package sizes. It
can be used in a wide range of applications, from motor control to
switching power supplies.
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