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FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device

    Buy cheap FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device from wholesalers
     
    Buy cheap FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device from wholesalers
    • Buy cheap FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device from wholesalers
    • Buy cheap FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device from wholesalers

    FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device

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    Brand Name : onsemi
    Model Number : FDN359BN
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device

    FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
    Rds On (Max) @ Id, Vgs
    46mOhm @ 2.7A, 10V
    Vgs(th) (Max) @ Id
    3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    7 nC @ 5 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    650 pF @ 15 V
    FET Feature
    -
    Power Dissipation (Max)
    500mW (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    SOT-23-3
    Package / Case

    The FDN359BN is an N-channel enhancement mode power MOSFET, designed for high-voltage switching applications. It has an integrated gate-source voltage (VGS) of -20V, a drain-source voltage (VDS) of 200V, and a continuous drain current (ID) of -3A. It is housed in a TO-236-3 package and features a fast switching speed and low on-state resistance. The MOSFET also has a very low input capacitance and output capacitance, making it ideal for high frequency applications. Additionally, the device has a low threshold voltage, making it suitable for switching applications. The FDN359BN is ideal for use in DC-DC converters, motor controls, and power inverters.

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    FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device

    Quality FDN359BN MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Device for sale
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