NTLJF3117PT1G MOSFET Power Electronics High Performance 6-WDFN Maximum Efficiency
Reliability
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | Schottky Diode (Isolated) | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The NTLJF3117PT1G is a P-channel enhancement mode MOSFET manufactured by ON Semiconductor. It is housed in a 6-WDFN package and features a low on-state resistance, low gate charge and high-speed switching. It is suitable for a wide range of applications, such as switching and linear applications. With a maximum drain to source voltage of -20V, the device has a drain current of -1.7A and a maximum power dissipation of 0.55 W. It is designed to operate at a junction temperature of 125°C and a maximum operating temperature of +150°C. The NTLJF3117PT1G is an excellent choice for applications that require high efficiency and reliable performance.
The NTLJF3117PT1G is a 100V N-Channel MOSFET with low gate charge
and low on-state resistance. This device is designed for power
switching applications in consumer, computer, industrial, telecom
and automotive applications. This MOSFET operates from -55°C to
125°C junction temperature and is housed in a 6-WDFN package.
The NTLJF3117PT1G features fast switching speed and low gate
threshold voltage. This device also has a low drain-source charge
to reduce switching losses and improve efficiency. The
NTLJF3117PT1G is also RoHS compliant and has built-in ESD
protection. This MOSFET can handle a wide range of drain-source
voltage and drain current. The NTLJF3117PT1G is ideal for DC-DC
converters, load switches, motor control, LED lighting, and
automotive applications.
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