FDN339AN MOSFET Power Electronics
TO-236-3 Package High Performance Reliable Switching Solution Applications
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The FDN339AN is a N-channel enhancement mode power MOSFET in a
TO-236-3 (SOT-23-3) package. It features a low gate-to-source
voltage, low on-resistance, and fast switching speed. The FDN339AN
is designed for general purpose, low voltage switching and
amplifier applications.
The FDN339AN is designed for applications such as high side
switching, low side switching, DC-DC converters, and motor drivers.
The low on-resistance and low gate-to-source voltage of the
FDN339AN make it ideal for switching applications operating at low
voltages. The fast switching speed and low capacitance of the
FDN339AN make it suitable for high-speed switching applications.
The gate-to-source voltage of the FDN339AN can be as low as 1.5V,
making it suitable for battery-operated applications.
The FDN339AN has a maximum drain-source voltage of 30V, a maximum
drain current of 1.2A, and a power dissipation rating of 500mW. The
device also features an operating temperature range of -55°C to
+150°C and a low gate charge of 15nC. The FDN339AN is RoHS
compliant and is available in a variety of package styles.
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