NTR5105PT1G MOSFET Power Electronics TO-236-3 Device High Efficiency Power
Conversion
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
NTR5105PT1G is a N-channel enhancement mode MOSFET which is housed
in the TO-236-3 package. It has a low on-resistance of 0.35 Ohms
and a low gate charge of 18 nC. It is designed for high speed
switching applications such as power supplies, motor control and
load switching. The device also has low gate threshold voltage,
making it suitable for low power applications. The maximum drain
current is 110A and the maximum drain-source voltage is 200V. It
has a high temperature rating of 175°C and a low thermal resistance
of 1.90°C/W. The NTR5105PT1G is RoHS compliant and is suitable for
high frequency switching applications.
The NTR5105PT1G is a MOSFET power electronics device in a TO-236-3
package. It is designed to provide optimal performance in high
voltage applications. With its low on-resistance and fast switching
times, it is ideal for applications requiring high efficiency and
power output.The NTR5105PT1G has a maximum drain-source voltage of
100V and a maximum drain current of 14A. It also has a maximum gate
threshold voltage of 1.5V, making it suitable for use with low gate
drive voltages. Its maximum drain-source on-resistance is 1.4Ω at
10V and typically 0.6Ω at 4.5V, allowing it to handle large amounts
of power with minimal losses.
The NTR5105PT1G is designed for durability and reliability, with a
maximum operating temperature of 175°C and an integrated ESD
protection circuit. It has a high-frequency switching performance
with a maximum turn-on time of 1.3µs and a maximum turn-off time of
2.6µs. This makes it suitable for applications requiring fast
switching, such as motor control and power conversion.
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