2N7002W MOSFET Power Electronics SC-70 High Performance Low Power
Consumption
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The 2N7002W is a SC-70 packaged N-channel enhancement mode MOSFET
from Diodes Inc. It is designed for low-voltage, low-current
switching applications and offer low on-resistance, fast switching
speed, and low threshold voltage. It is suitable for use in
portable and handheld devices as well as for power management,
high-speed switching, and low-side switching applications. The
2N7002W features a low RDS(on) of 0.35Ω, a low gate-source
threshold voltage of 1V, and a fast switching speed of 75ns. The
package is RoHS compliant, and it is AEC-Q101 qualified. The device
can operate up to a drain-source voltage of 20V and a continuous
drain current of 200mA. The 2N7002W is available in a SC-70 package
and is ideal for space-constrained applications.
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