NTR4101PT1G MOSFET Power Electronics Transistor TO-236-3 Package Enhancement Mode

NTR4101PT1G MOSFET Power Electronics Transistor TO-236-3 Package Enhancement Mode

FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	85mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	675 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	420mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

The NTR4101PT1G is a high-performance enhancement mode Power MOSFET with a low on-resistance of 0.16 Ohm. It is an ideal choice for applications in which low voltage and low on-resistance are key performance parameters. With a maximum drain source voltage of 60V, it is suitable for a variety of applications such as DC-DC converters and high-speed switching. The TO-236-3 package provides a low profile solution for space-constrained designs. The NTR4101PT1G also features fast switching speeds, low gate charge and low gate-to-drain capacitance, making it an excellent choice for high-speed switching applications. The NTR4101PT1G is designed and tested to meet the specifications of the international standard JEDEC and offers reliable operation in the harshest environments.

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