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NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications

Shenzhen Sai Collie Technology Co., Ltd.
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    Buy cheap NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications from wholesalers
     
    Buy cheap NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications from wholesalers
    • Buy cheap NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications from wholesalers
    • Buy cheap NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications from wholesalers

    NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications

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    Brand Name : onsemi
    Model Number : NTR5198NLT1G
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications

    NTR5198NLT1G MOSFET Power Electronics

    TO-236-3 Package Transistor High Performance Applications

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
    Rds On (Max) @ Id, Vgs
    155mOhm @ 1A, 10V
    Vgs(th) (Max) @ Id
    2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    2.8 nC @ 4.5 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    182 pF @ 25 V
    FET Feature
    -
    Power Dissipation (Max)
    900mW (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    SOT-23-3 (TO-236)
    Package / Case

    This NTR5198NLT1G MOSFET Power Electronics is a 3-pin TO-236-3 package. It offers high efficiency and low on-resistance while operating at a low voltage. It is suitable for applications such as power switches, motor drivers and solenoid drivers. This device has a high breakdown voltage of 30V, which provides a higher level of protection for the system. It also has an optimized gate charge for reduced conduction loss and improved switching performance. The device is an N-channel MOSFET optimized for low voltage switching applications. It is RoHS compliant and is offered in a lead free package. This device is ideal for high frequency switching and can operate at frequencies up to 10MHz.

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    NTR5198NLT1G MOSFET Power Electronics TO-236-3 Package Transistor High Performance Applications

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