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FDMS7682 8-PQFN MOSFET Power Electronics N-Channel POWERTRENCH 30V 8-PQFN Package

    Buy cheap FDMS7682 8-PQFN MOSFET Power Electronics N-Channel POWERTRENCH 30V 8-PQFN Package from wholesalers
     
    Buy cheap FDMS7682 8-PQFN MOSFET Power Electronics N-Channel POWERTRENCH 30V 8-PQFN Package from wholesalers
    • Buy cheap FDMS7682 8-PQFN MOSFET Power Electronics N-Channel POWERTRENCH 30V 8-PQFN Package from wholesalers
    • Buy cheap FDMS7682 8-PQFN MOSFET Power Electronics N-Channel POWERTRENCH 30V 8-PQFN Package from wholesalers

    FDMS7682 8-PQFN MOSFET Power Electronics N-Channel POWERTRENCH 30V 8-PQFN Package

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    Brand Name : onsemi
    Model Number : FDN537N
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1-3 days
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    FDMS7682 8-PQFN MOSFET Power Electronics N-Channel POWERTRENCH 30V 8-PQFN Package


    FDMS7682 8-PQFN MOSFET Power Electronics N-Channel POWERTRENCH 30V 8-PQFN Package


    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
    Rds On (Max) @ Id, Vgs
    6.3mOhm @ 14A, 10V
    Vgs(th) (Max) @ Id
    3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    30 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    1885 pF @ 15 V
    FET Feature
    -
    Power Dissipation (Max)
    2.5W (Ta), 33W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    8-PQFN (5x6)
    Package / Case

    FDMS7682 N-Channel 40V 8-PQFN MOSFET Power Electronics


    The FDMS7682 is a N-Channel Power MOSFET from ON Semiconductor. With an operating voltage range of -40V to -80V, it is designed for use in high-power applications such as motor control, server power supplies, and high-voltage switching. This device features a low RDS(on) of 0.0085Ω and a maximum continuous drain current of 15A. It also includes a maximum drain-source breakdown voltage of 100V and a maximum gate-source voltage of ±20V. This MOSFET is packaged in an 8-PQFN package and is rated for operation from -55°C to 150°C.


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