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2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package

Shenzhen Sai Collie Technology Co., Ltd.
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    Buy cheap 2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package from wholesalers
     
    Buy cheap 2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package from wholesalers
    • Buy cheap 2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package from wholesalers
    • Buy cheap 2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package from wholesalers

    2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package

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    Brand Name : onsemi
    Model Number : 2N7002KT1G
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package

    2N7002KT1G MOSFET Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Package

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
    Rds On (Max) @ Id, Vgs
    1.6Ohm @ 500mA, 10V
    Vgs(th) (Max) @ Id
    2.3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    0.7 nC @ 4.5 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    24.5 pF @ 20 V
    FET Feature
    -
    Power Dissipation (Max)
    300mW (Ta)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    SOT-23-3 (TO-236)
    Package / Case

    The 2N7002KT1G is a N-Channel Enhancement Mode Field-Effect Transistor (MOSFET) housed in a TO-236-3 surface-mount package. This device is built using an advanced Trench MOSFET technology, allowing for a low on-resistance and fast switching times. This MOSFET can be used as a switch or amplifier in applications such as DC-DC converters, general-purpose switching, motor control and power management. It features a maximum drain-source voltage of 60V, a drain-source on-resistance of 4.3 mΩ and a maximum drain current of 200mA. This MOSFET is RoHS compliant and AEC-Q101 qualified.


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