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2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application

Shenzhen Sai Collie Technology Co., Ltd.
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    Buy cheap 2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application from wholesalers
     
    Buy cheap 2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application from wholesalers
    • Buy cheap 2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application from wholesalers
    • Buy cheap 2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application from wholesalers

    2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application

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    Brand Name : onsemi
    Model Number : 2V7002KT1G
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    2V7002KT1G MOSFET Power Electronics TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Application

    2V7002KT1G MOSFET Power Electronics
    TO-236-3 N-Channel Enhancement Mode Transistor On Resistance Efficiency Applications

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
    Rds On (Max) @ Id, Vgs
    1.6Ohm @ 500mA, 10V
    Vgs(th) (Max) @ Id
    2.3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    0.7 nC @ 4.5 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    24.5 pF @ 20 V
    FET Feature
    -
    Power Dissipation (Max)
    300mW (Tj)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    SOT-23-3 (TO-236)
    Package / Case

    MOSFET Power Electronics 2V7002KT1G is a TO-236-3 package type MOSFET. It is a n-channel enhancement mode MOSFET, optimized for switching applications. It has a low on-resistance of 0.0068 ohms, which can reduce power losses in the circuit. It also has a maximum drain-source voltage of 200V and a maximum drain current of 2A. It has a high input impedance and ESD protection, making it suitable for use in high speed switching applications. The package is RoHS compliant, making it an environmentally friendly option. This device is perfect for use in power management and control applications.


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