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FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation

Shenzhen Sai Collie Technology Co., Ltd.
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    Buy cheap FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation from wholesalers
     
    Buy cheap FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation from wholesalers
    • Buy cheap FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation from wholesalers
    • Buy cheap FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation from wholesalers

    FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation

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    Brand Name : onsemi
    Model Number : FDMS039N08B
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation

    FDMS039N08B Power MOSFET Transistor High

    Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    3.9mOhm @ 50A, 10V
    Vgs(th) (Max) @ Id
    4.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    100 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    7600 pF @ 40 V
    FET Feature
    -
    Power Dissipation (Max)
    2.5W (Ta), 104W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    8-PQFN (5x6)
    Package / Case

    The FDMS039N08B is a 100V N-Channel MOSFET from Fairchild Semiconductor, featuring a maximum drain source voltage of 100V and a maximum drain current of 39A. It is designed for use in power management, load switching, and other high voltage applications. It features a low on-resistance and low gate charge, making it suitable for high frequency switching applications. It has a fast switching speed and excellent thermal stability, making it suitable for high power applications. The device has an ultra-low gate charge and an ultra-low on resistance, allowing it to operate at high efficiency in a wide range of switching applications. It is available in a TO-220 full-pack package.

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    FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation

    Quality FDMS039N08B Power MOSFET Transistor High Performance Low On-Resistance Ultra-Low Gate Charge Robust Switching Operation for sale
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