NTMFS5C404NLT1G MOSFET Power Electronics 8-PowerTDFN Voltage N-Channel Power MOSFETs
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTMFS5C404NLT1G is an advanced power MOSFET from ON Semiconductor. It is a low-threshold, single N-channel enhancement-mode MOSFET housed in an 8-pin PowerTDFN package. This MOSFET has a maximum drain source voltage of 40V, a maximum drain current of 8A, and a maximum drain-source on-resistance of 4mΩ.
It is designed to operate at a maximum junction temperature of 150°C and can deliver high efficiency power management in a wide range of applications, including DC/DC converters, power supplies, data switches, and motor control. Additionally, this device features low gate charge and low input and output capacitance, making it ideal for use in high-frequency switching applications.
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