FDB110N15A MOSFET Power Electronics
TO-263-3 Transistor High Performance Switching Amplification
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The FDB110N15A is a N-channel MOSFET power electronic device
manufactured by Fairchild Semiconductor. This device is housed in a
TO-263-3 package, which is a small surface-mountable package that
provides low-profile, enhanced thermal performance.
The FDB110N15A is designed to deliver high power in a compact
package. It features a low on-resistance which enables low
conduction losses, and a low gate charge which reduces switching
losses. Additionally, this device is designed to provide fast
switching speeds and low gate charge for efficient switch
operation.
The FDB110N15A is ideal for use in a variety of applications such
as DC/DC converters, power factor correction, motor control,
lighting control, and other high-power applications. This device is
RoHS compliant and meets UL and CSA safety standards for reliable
operation.
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