NVTR0202PLT1G MOSFET Power Electronics
Dual N-Channel Enhancement Mode Field Effect Transistor 20V 2A
TO-236-3 Package
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The NVTR0202PLT1G is a P-Channel Enhancement Mode Vertical Field-Effect Transistor (VFET), which is designed specifically for high-frequency, low-voltage applications. This device is constructed using a highly reliable MOSFET process, which provides low on-state resistance and excellent switching performance. The device is housed in a TO-236-3 package and provides a low-voltage operation range of -0.2V to -20V and a low gate-source threshold voltage of -0.5V. It is ideal for high-frequency switching circuits and provides high current handling capability. The device also offers superior power efficiency, low EMI, and minimal power dissipation.
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