NTMFS5C430NLT1G MOSFET Power Electronics
8-PowerTDFN N-Channel Enhancement Mode Resistance Fast Switching
Capability
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
The NTMFS5C430NLT1G is a 30V N-Channel MOSFET from ON Semiconductor, designed for use in power management applications. It is housed in an 8-PowerTDFN package and has a drain-source breakdown voltage of 30V, a gate-source breakdown voltage of 20V and a maximum drain current of 4.3A. The device has an on-resistance of 0.05ohm, a maximum junction temperature of 175C and a typical gate charge of 32nC. It is suitable for use in DC-DC converters, motor control, power distribution and load switching applications.
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