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FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module

Shenzhen Sai Collie Technology Co., Ltd.
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    Buy cheap FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module from wholesalers
     
    Buy cheap FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module from wholesalers
    • Buy cheap FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module from wholesalers
    • Buy cheap FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module from wholesalers

    FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module

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    Brand Name : onsemi
    Model Number : FDPF33N25T
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 999999
    Delivery Time : 1 - 3 days
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    FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module

    FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module

    FET Type
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    94mOhm @ 16.5A, 10V
    Vgs(th) (Max) @ Id
    5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    48 nC @ 10 V
    Vgs (Max)
    ±30V
    Input Capacitance (Ciss) (Max) @ Vds
    2135 pF @ 25 V
    FET Feature
    -
    Power Dissipation (Max)
    37W (Tc)
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Mounting Type
    Supplier Device Package
    TO-220F-3
    Package / Case
    Base Product Number

    The FDPF33N25T is a TO-220-3 packaged N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for power switching applications. This device features a low on-state resistance (RDS(ON)) and a fast switching time. It is especially suitable for high-frequency switching applications, with a maximum operating frequency of 5MHz. The gate-source voltage (VGS) range is from -20V to +20V, and the drain-source voltage (VDS) range is from 0V to 25V. The maximum power dissipation is up to 33W, and the maximum drain current (ID) is up to 25A. This device is also RoHS compliant and lead-free, making it an ideal choice for environmental friendly applications.

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    FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module

    Quality FDPF33N25T MOSFET Power Electronics TO-220-3 N-Channel Enhancement Mode Transistor Module for sale
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