FDMQ86260 Power MOSFET N-Channel
Enhancement Mode TO-263 Package Industrial Applications Power Electronics
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDMC86260 is a high-performance, low-RDS(on) power MOSFET. This device is specifically designed for high-efficiency, high-speed switching applications and is ideal for use as a power switch in high-current applications such as automotive, industrial and communications systems.
The integrated ultra-low power loss, high-speed switching and improved thermal performance make the FDMC86260 an ideal choice for high-power and high-density applications. The device is available in a TO-220 package, allowing for a maximum current rating of up to 200A and a maximum voltage rating of up to 600V.
The advanced design of the device ensures a low-power loss and improved thermal performance, allowing for higher switching speeds and improved energy efficiency. The device also features a wide range of safety features, including over-temperature protection and short circuit protection, providing reliable and robust operation in a wide variety of applications.
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