BSS123L MOSFET Power Electronics Applications
TO-236-3 Packaged N-Channel Enhancement Mode Field Effect
Transistor
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
BSS123L is a N-channel enhancement mode power MOSFET, packaged in the TO-236-3 package. It is designed with low on-resistance and excellent switching performance, making it suitable for a wide range of applications. The MOSFET features an optimized gate charge and improved gate-source voltage threshold, which allows for better control and improved efficiency. It also offers low capacitances, ensuring low switching losses.
The package is compatible with the surface mount process, allowing for easy integration into boards or other applications. This MOSFET is able to handle high current and voltage, making it suitable for high-power applications. It is also RoHS compliant, making it an environmentally friendly and reliable choice.
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