BSS123LT1G MOSFET Power Electronics
N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
BSS123LT1G is a N-channel enhancement mode MOSFET, designed for high-frequency switching applications. It is offered in a TO-236-3 package, which is a plastic surface-mount package with leads in a dual-in-line configuration. This device is designed to minimize on-state resistance while providing superior switching performance and high-temperature reliability.
This MOSFET has a high input impedance, making it suitable for use in a wide range of power management systems, such as DC-DC converters, power inverters, and motor drives. It also offers low gate charge and low total gate charge for fast switching, as well as low power consumption. Additionally, it has ESD protection and is RoHS compliant, making it a cost-effective solution for various high-frequency applications.
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