FDD86250 MOSFET Power Electronics TO-252-3 Transistor for Power Switching and Voltage Regulation

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	22mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2110 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 132W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

The FDD86250 is a three-terminal, N-Channel Power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed to operate in a wide range of power switching applications. It is housed in a TO-252-3 package, making it ideal for use in compact and space-saving electronic systems. This MOSFET features a high blocking voltage rating of 600V and a low on-state resistance of 0.072ohms.

It has a continuous drain current rating of 25A and a maximum pulse current of 78A, making it suitable for high-power switching applications. The FDD86250 also features a fast switching speed for enhanced system efficiency as well as a low gate charge for reduced power consumption. Its advanced design ensures reliable performance in a wide range of operating conditions.

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Shenzhen Sai Collie Technology Co., Ltd.