FDC653N MOSFET Power Electronics
N-Channel Enhancement Mode Transistor SOT-23-6 Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDC653N is a N-channel enhancement mode Field Effect Transistor (FET) designed to maximize power dissipation in a compact SOT-23-6 package. It is a high-efficiency, low on-resistance, low gate-charge MOSFET that features a low input capacitance, fast switching speed, and low gate-to-drain charge.
The FDC653N is ideal for high current, high frequency switching applications such as DC-DC converters, motor drivers, and switching power supplies. It provides very low on-resistance and low gate charge for excellent power dissipation and low switching losses. The FDC653N is RoHS compliant and compatible with lead-free reflow soldering processes.
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