IRF7319TRPBF MOSFET High-Power High-Speed Switching for Power
Electronics Applications
Description: This MOSFET is a N-channel HEXFET® Power MOSFET with
low gate charge and low on-resistance.
Features:
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175°C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirement
• AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Specifications:
• Drain-Source Voltage: 100V
• Gate-Source Voltage: ±20V
• Continuous Drain Current: 75A
• Pulsed Drain Current: 150A
• Drain-Source On-Resistance: 0.0085 Ohms
• RDS(on) Test Voltage: 10V
• Operating Temperature: -55°C to 175°C
• Mounting Type: Surface Mount
• Package/Case: TO-220
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