NTMFS4C028NT1G MOSFET Power Electronics
Product Description:
The NTMFS4C028NT1G is a power MOSFET transistor that is designed
for use in power electronics and converters. This device is built
with the latest MOSFET technology and offers high performance and
low on-state resistance for superior power efficiency. It also
features a low gate-to-source voltage threshold and excellent
avalanche ruggedness for robust operation.
Features:
• Low On-State Resistance (RDS(on))
• High Avalanche Ruggedness
• Low Gate-to-Source Voltage Threshold
• High Performance MOSFET Technology
• Wide Operating Temperature Range
Specifications:
• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 4A
• On-State Resistance (RDS(on)): 0.0080 Ω
• Gate-to-Source Voltage (VGS): -20V to +20V
• Maximum Power Dissipation (PD): 1.6W
• Operating Temperature Range: -55°C to +175°C
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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