IPP032N06N3GXKSA1 MOSFET Power Electronics
Product Features:
• N-channel enhancement mode MOSFET
• Low gate charge
• Low on-state resistance
• Fast switching
• Fully molded plastic package
• RoHS compliant
Product Specifications:
• Part Number: IPP032N06N3GXKSA1
• Transistor Type: MOSFET
• Package Type: Fully Molded Plastic
• Pin Count: 3
• Mounting Type: Surface Mount
• Maximum Gate Source Voltage (VGS): ±20V
• Maximum Drain Source Voltage (VDS): 60V
• Maximum Drain Current (ID): 15A
• Maximum Drain Source On-state Resistance (RDS(on)): 0.043 Ohm
• Maximum Operating Temperature (Tj): 150 °C
• Maximum Storage Temperature (Tstg): -55 to 150 °C
• Minimum Operating Temperature (Tj): -55 °C
• Maximum Gate Threshold Voltage (VGS): 2V
• Maximum Power Dissipation (PD): 5.4W
• Polarity: N
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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