NVMFS5C646NLWFAFT1G MOSFET Power Electronics
Product Description:
The NVMFS5C646NLWFAFT1G is a high-performance MOSFET power
electronics device designed to deliver superior power efficiency
and reliability. This N-channel MOSFET is suitable for use in a
variety of applications, including power conversion, motor control,
and signal conditioning. It is constructed with an integrated
high-voltage gate and an integrated body diode, enabling its use in
high-power applications. With an excellent on-resistance and low
gate charge, this device provides superior power efficiency and
reliability in a wide variety of systems.
Features:
-High-performance MOSFET power electronics
-Integrated high-voltage gate
-Integrated body diode
-Excellent on-resistance
-Low gate charge
-Wide variety of systems
Applications:
-Power conversion
-Motor control
-Signal conditioning
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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