FQT13N06LTF – N-Channel MOSFET Power Electronics
Product Features:
• N-Channel MOSFET
• Low On-Resistance
• Low Gate Charge
• Low Input Capacitance
• High Breakdown Voltage
• High Power Dissipation
• Low Body Diode Reverse Recovery Time
• RoHS Compliant
Parameters:
• VDS (V) = 60V
• ID (A) = 13A
• RDS (ON) (Ω) = 0.08Ω
• Qg (Max) (nC) = 21.8nC
• Qgs (nC) = 8.2nC
• Qgd (nC) = 13.6nC
• Ciss (pF) = 1170pF
• BVDSS (V) = 100V
• Tj (Max) (°C) = 150°C
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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