SPD18P06PGBTMA1 MOSFET Power Electronics
Features:
- Low Gate Threshold Voltage VGSth=2.5V
- Low Output Capacitance Coss=4.4pF
- Low On-Resistance RDS(on)=1.6mΩ
- High Speed Switching dv/dt=10V/ns
- Optimized for High Temperature Operation
- Halogen-free
- RoHS Compliant
Specifications:
- Drain-Source Voltage: -20V to +60V
- Gate-Source Voltage: ±20V
- Drain Current: 18A
- Power Dissipation: 4.2W
- Operating Temperature Range: -55°C to +175°C
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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