Product listing:
IRLR7833TRPBF MOSFET Power Electronics
Features:
• N-Channel, Enhancement Mode
• Low On-Resistance
• High-Speed Switching
• Low Gate Charge
• Low Input and Output Capacitance
• Easy to Drive
Specifications:
• Drain-Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 34A
• On-Resistance (Rds(on)): 0.0013ohm
• Gate Charge (Qg): 19nC
• Threshold Voltage (Vgs(th)): 4V
• Maximum Junction Temperature (Tj): 150°C
• Transistor Polarity: N-Channel
• Rds(on) Test Voltage: 10V
• Mounting Style: Through Hole
• Package/Case: TO-220AB
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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