NTP165N65S3H MOSFET Power Electronics
Features:
• Low Gate Charge
• Low On-state Resistance
• High Breakdown Voltage
• Low Input Capacitance
• Low Output Capacitance
• Low Threshold Voltage
• High Current Capability
• Low Operating Temperature
• High Frequency Operation
Specifications:
• Voltage: 650V
• Current: 165A
• Power: 2.6KW
• Drain-Source On-state Resistance (RDSon): 4.2mΩ
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature: -55 ~ 175°C
• Gate Charge: 10nC
• Input Capacitance: 4800pF
• Output Capacitance: 2600pF
• Threshold Voltage: 2.6V
• Mounting Type: Through Hole
• Package/Case: TO-220-3
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
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