Product Listing:
NVF3055L108T1G MOSFET Power Electronics
Product Type: MOSFET Power Electronics
Configuration: N-Channel MOSFET
Maximum Drain Source Voltage (Vdss): 30V
Maximum Gate Source Voltage (Vgs): ±20 V
Maximum Drain Current (Id): 108 A
Rds On (Max) @ Id, Vgs: 0.0055 Ohm @ 108 A, 10 V
Package/Case: TO-220
Operating Temperature: -55°C to 175°C
Power Dissipation: 415 W
Mounting Type: Through Hole
Manufacturer: ON Semiconductor
Manufacturer Part Number: NVF3055L108T1G
Product Status | | |
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
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