SI2347DS-T1-BE3 High-Speed High-Efficiency
N-Channel MOSFET for Power Electronics Applications
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
Features:
-High current handling of up to 28A
-Low on-resistance of up to 0.0075 Ohms
-Low gate charge of up to 14nC
-Low input capacitance of up to 10pF
-Low threshold voltage of up to 1.65V
-Maximum drain-source voltage of up to 30V
-Logic level compatible
-AEC-Q101 qualified
-Halogen-free, RoHS Compliant
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