FDN337N MOSFET Power Electronics N-Channel Transistor TO-236-3 Package Ideal High Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The FDN337N is an N-channel Power MOSFET from STMicroelectronics, designed for use in power electronics applications. This Power MOSFET is housed in a TO-236-3 package, making it suitable for high-density surface mount applications. It is capable of operating at currents up to 4A and voltages up to 100V. Its low on-resistance and low gate charge make it ideal for use in low-voltage, high-performance switching applications.
It features a fast switching speed, low input and output capacitance, and low gate threshold voltage. This makes the FDN337N a great choice for use in switching circuits, such as DC-DC converters and motor drivers. It is designed to operate over a temperature range of -55˚C to 150˚C, making it suitable for a wide range of applications. The FDN337N is a robust, reliable, and cost-effective solution for power electronics applications.
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