NTR2101PT1G MOSFET Power
Electronics Transistor TO-236-3 Package 30V 25A 30W Switching Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTR2101PT1G is a N-Channel MOSFET in a TO-236-3 package. It features an ultra-low on-resistance RDS(ON) of 0.2Ω and an avalanche energy rated at maximum 25mJ. This MOSFET is designed for high frequency switching applications such as DC-DC converters, motor drives, and other power management applications. It has a low gate charge Qg and fast switching times, and it is optimized for low voltages and low on-state resistance. The NTR2101PT1G is RoHS compliant and halogen-free.
The NTR2101PT1G is a N-channel enhancement mode MOSFET suitable for power switching applications. It features low on-state resistance, fast switching speed, and low gate charge. The TO-236-3 (SC-59) package is ideal for space-constrained applications. This MOSFET can be used in a wide range of power switching applications such as DC-DC converters, AC-DC converters, and motor control. It has a maximum drain source voltage of 30V, a continuous drain current of 1.2A, and a maximum power dissipation of 500mW. Additionally, the device features a low gate threshold voltage of 1.9V and a fast switching time of 10ns.
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