Name: FDMC86116LZ MOSFET Power Electronics NChannel Shielded Gate 100 V 75 A 103 m
Brand: onsemi
Price: 1 USD

General Description
This N−Channel logic Level MOSFETs are produced using
onsemi‘s advanced POWERTRENCH process that incorporates
Shielded Gate technology. This process has been optimized for the
on−state resistance and yet maintain superior switching performance.
G−S zener has been added to enhance ESD voltage level.

Features
• Max RDS(on) = 103 m at VGS = 10 V, ID = 3.3 A
• Max RDS(on) = 153 m at VGS = 4.5 V, ID = 2.7 A
• HBM ESD Protection Level > 3 kV Typical (Note 1)
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant

Applications
• DC−DC Conversion

• Battery protectionWhy buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

Ask Lasest Price
Brand Name :	onsemi
Model Number :	FDMC86116LZ
Price :	Negotiable
Payment Terms :	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :	999999
Delivery Time :	1-3 days

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	3.3A (Ta), 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	103mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	310 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-MLP (3.3x3.3)
Package / Case	8-PowerWDFN


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Shenzhen Sai Collie Technology Co., Ltd.

FDMC86116LZ MOSFET Power Electronics N-Channel Shielded Gate 100 V 7.5 A 103 m

FDMC86116LZ MOSFET Power Electronics N-Channel Shielded Gate 100 V 7.5 A 103 m

FDMC86116LZ MOSFET Power Electronics N-Channel Shielded Gate 100 V 7.5 A 103 m

FDMC86116LZ MOSFET Power Electronics N-Channel Shielded Gate 100 V 7.5 A 103 m