eneral Description
This P-Channel 2.5V specified MOSFET is produced
using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power.

applications: load switching and power management,
battery charging circuits, and DC/DC conversion.

Features
· –4.5 A, –20 V.RDS(ON) = 48 mW @ VGS = –4.5 V
RDS(ON) = 65 mW @ VGS = –2.5 V
· Low gate charge (10 nC typical)
· High performance trench technology for extremely
low RDS(ON)
· SuperSOT ™ –6 package: small footprint (72%
smaller than standard SO-8; low profile (1mm thick)

• Battery protectionWhy buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

Ask Lasest Price
Brand Name :	onsemi
Model Number :	FDC638P
Price :	Negotiable
Payment Terms :	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :	999999
Delivery Time :	1-3 days

Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	48mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1160 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-6
Package / Case	SOT-23-6 Thin, TSOT-23-6


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Shenzhen Sai Collie Technology Co., Ltd.

FDC638P MOSFET Power Electronics P-Channel 2.5V Trench load switching

FDC638P MOSFET Power Electronics P-Channel 2.5V Trench load switching

FDC638P MOSFET Power Electronics P-Channel 2.5V Trench load switching

FDC638P MOSFET Power Electronics P-Channel 2.5V Trench load switching