FDMS8333L MOSFET Power Electronics N-Channel PowerTrench® 40 V 76 A 3.1 mΩ Package 8-PQFN

Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4545 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerTDFN

Features:
„ Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
„ Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
„ Advanced Package and Silicon combination for low rDS(on) and high efficiency
„ Next generation enhanced body diode technology, engineered for soft recovery
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant

General Description:
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Applications:
„ OringFET / Load Switching
„ Synchronous rectification
„ DC-DC Conversion

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