IRLR2705TRPBF MOSFET Power Electronics N-Channel dissipation levels 1.5 Package TO-252

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	40mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 5 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2705)
Straight Lead (IRLU2705)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance persilicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a widevariety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

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