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| Brand Name : | Infineon |
| Model Number : | IPD110N12N3GATMA1 |
| Price : | Negotiable |
| Payment Terms : | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability : | 999999 |
| Delivery Time : | 1-3 days |
IPD110N12N3GATMA1 MOSFET Power Electronics N-Channel OptiMOS™Power-Transistor 120V
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 11mOhm @ 75A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 83µA (Typ) | |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 60 V | |
FET Feature | - | |
Power Dissipation (Max) | 136W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | PG-TO252-3 | |
Package / Case |
Features
N-channel, normal level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target application
Halogen free according to IEC61249-2-21 *
Ideal for high-frequency switching and synchronous rectification

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