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| Brand Name : | Infineon |
| Model Number : | BSC011N03LSIATMA1 |
| Price : | Negotiable |
| Payment Terms : | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability : | 999999 |
| Delivery Time : | 1-3 days |
BSC011N03LSIATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30 V Package 8-PowerTDFN
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.1mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | PG-TDSON-8-7 | |
Package / Case |
Features
Optimized for high performance SMPS
Integrated monolithic Schottky-like diode
Very low on-resistance Ros(on) @ Ves=4.5 V
100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC1)for target applications·Pb-free lead
plating; RoHS compliant
Halogen-free according to lEC61249-2-21

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