AOSS21319C MOSFET Power
Electronics Transistors P-Channel 30V For Load Switch Package
SOT-23-3
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | | |
Base Product Number | |
General Description
• Trench Power MOSFET technology -30V
• Low RDS(ON) • Low Gate Charge
• RoHS and Halogen-Free Compliant
A. The value of RqJA is measured with the device mounted on 1in2
FR-4 board with 2oz. Copper, in a still air environment with TA
=25°C. The value in any given application depends on the user's
specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s
junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature
TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles
to keep initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to
lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using
<300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal
impedance which is measured with the device mounted on 1in2 FR-4
board with 2oz. Copper, assuming a maximum junction temperature of
TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
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