General Description
This N−Channel MOSFET is produced using ON Semiconductor‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.

Features
• Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A
• Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 A
• Low Profile − 1 mm Max in Power 33
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• DC − DC Conversion

• Battery protectionWhy buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
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Service >>>
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Ask Lasest Price
Brand Name :	onsemi
Model Number :	FDMC86244
Price :	Negotiable
Payment Terms :	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :	999999
Delivery Time :	1-3 days

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta), 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	134mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	345 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	2.3W (Ta), 26W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-MLP (3.3x3.3)
Package / Case	8-PowerWDFN


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Shenzhen Sai Collie Technology Co., Ltd.

FDMC86244 MOSFET Power Electronics N-Channel Shielded Gate 150 V 9.4 A 134 m Conversion

FDMC86244 MOSFET Power Electronics N-Channel Shielded Gate 150 V 9.4 A 134 m Conversion

FDMC86244 MOSFET Power Electronics N-Channel Shielded Gate 150 V 9.4 A 134 m Conversion

FDMC86244 MOSFET Power Electronics N-Channel Shielded Gate 150 V 9.4 A 134 m Conversion