This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for brid gecircuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected
voltage transients.

Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

• Battery protectionWhy buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

Ask Lasest Price
Brand Name :	onsemi
Model Number :	NTD2955T4G
Price :	Negotiable
Payment Terms :	L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :	999999
Delivery Time :	1-3 days

Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	55W (Tj)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63


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Shenzhen Sai Collie Technology Co., Ltd.

NTD2955T4G MOSFET Power Electronics P-Channel DPAK -60 V -12 A NVD SVD Automotive

NTD2955T4G MOSFET Power Electronics P-Channel DPAK -60 V -12 A NVD SVD Automotive

NTD2955T4G MOSFET Power Electronics P-Channel DPAK -60 V -12 A NVD SVD Automotive

NTD2955T4G MOSFET Power Electronics P-Channel DPAK -60 V -12 A NVD SVD Automotive