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| Brand Name : | onsemi |
| Model Number : | FDMS86180 |
| Price : | Negotiable |
| Payment Terms : | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability : | 999999 |
| Delivery Time : | 1-3 days |
FDMS86180 MOSFET Power Electronics N-Channel Shielded Gate PowerTrench 100 V 151 A 3.2 mΩ
N-Channel PowerTrench
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 169 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | 357W (Tj) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-HPSOF | |
Package / Case |
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A
Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MV MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that incorporates
Shielded Gate technology. This process has been optimized to
minimize on-state resistance and yet maintain superior switching
performance with best in class soft body diode.
Applications
Primary DC-DC MOSFET
Synchronous Rectifier in DC-DC and AC-DC
Motor Drive
Solar

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