IPP045N10N3GXKSA1 MOSFET Power
Electronics NChannel MOSFET for Switching Applications
FET Type | | |
Technology | | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | | |
Rds On (Max) @ Id, Vgs | | |
Vgs(th) (Max) @ Id | | |
Gate Charge (Qg) (Max) @ Vgs | | |
Vgs (Max) | | |
Input Capacitance (Ciss) (Max) @ Vds | | |
FET Feature | | |
Power Dissipation (Max) | | |
Operating Temperature | | |
Mounting Type | | |
Supplier Device Package | | |
Package / Case | |
Description:
The IPP045N10N3GXKSA1 MOSFET is designed for high speed switching
applications. It is an N-Channel enhancement mode MOSFET with an
avalanche energy rated of 70mJ, a drain current rating of 45A, a
drain-source on-state resistance of 0.010 Ohm, and a gate charge
rating of 31nC. It also has a threshold voltage of 2.0V and a total
gate charge of 46nC.
In addition, it features a maximum drain-source voltage of 45V, a
maximum drain-source on-state resistance of 0.013 Ohm, and a
maximum gate-source voltage of 20V. The MOSFET is housed in a
PowerPAK SO-8N package, which is RoHS compliant.This is an
N-channel MOSFET with a maximum drain-source voltage of 100V. It
has an RDS(on) of 0.45Ω and an ID of 45A. It is ideal for
high-speed switching applications.
Features:
• Maximum drain-source voltage: 100V
• RDS(on): 0.45Ω
• ID: 45A
• Fast switching speed
• Low gate threshold voltage
• Low on-state resistance
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